FIRST DAY

Introduction: Overview of semiconductor industry, contemporary CMOS process flow with cross sections, Semiconductor Technology Roadmap.

Yield: Global sales data, wafer yield models and market dynamics.

Silicon Materials: Silicon purification and single crystal growth, wafer manufacture and gettering processes.

Cleaning & Oxidation process: Cleaning effects, dry & wet growth kinetics, multiple step, HCL, pressure enhanced, oxide isolation technology, oxide thickness control and determination, dopant redistribution, oxidation of Si3N4.

SECOND DAY

Cleaning & Oxidation process: (Continued)

Photo & Etch: Masking process: DSW, positive and negative reversal resists; minimum line width, depth of focus, phase shifting; wet etch, plasma etch, combination etch, plasma damage.

Dopant Introduction Implantation: Process explanation, profiles, channeling, RP, DRP, DRL, boron anomalies, masking, measurement tools, activation, Qsi.

Dopant Movement Diffusion: Dopant solubility, diffusion rates, characteristic diffusion length, profiles, dopant layer evaluations.

THIRD DAY

CVD: Epitaxial Si, polycrystalline Si, oxides, nitrides, metals, silicides films. Atmospheric, low pressure, plasma enhanced processes. Measurements techniques. Shallow trench using CVD & CMP.

PVD: Requirements, contact resistance, electromigration, stress voids. Aluminum systems, tungsten plug formation, copper systems, single and dual damascene & contemporary interconnect technology.

Semiconductor Physics: Energy band model, electrons & holes, majority & minority carriers, Fermi levels, conduction, mobility, resistivity, carrier lifetime, effects on device properties.

FOURTH DAY

Diodes: Junction diodes, diode characteristics, abrupt junction, electric field and potential distribution, voltage breakdown, switching, leakage currents. Schottky diodes.

Bipolar: Bipolar fundamentals, bipolar process flow, current gain, transport, voltage limitations, leakage, switching performance, BICMOS.

CMOS: MOS fundamentals, surface effects, C/V measurement TDDB, Vt definition, transistor operating characteristics, switching principles

FIFTH DAY

CMOS: Isolation technology, DRAM principles, ionizing radiation, scaling rules & impact, EPROMS, EEPROMS, flash memories, DMOS.

Assembly: Assembly flow, die attach, lead bonding, bump technology, packages, BGA technology, failure mechanisms of packaged devices.

Quality Control & Failure Analysis: Statistical process control, failure mechanisms & activation energies, failure analysis tools & techniques.

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